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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF327/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. * Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz * Built-In Matching Network for Broadband Operation Using Double Match Technique * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications * Characterized for 100 to 500 MHz MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 9.0 12 250 1.43 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C MRF327 80 W, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) Collector-Base Breakdown Voltage (IC = 80 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 33 60 4.0 60 -- -- -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) hFE 20 -- 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 95 125 pF NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 1 1 ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz, VSWR = 30:1 All Phase Angles) GPE No Degradation in Output Power 7.3 50 9.0 60 -- -- dB % R2 L3 C12 L2 C13 + C14 C15 + - VCC 28 Vdc L4 L5 R1 C11 Z2 Z3 C10 RF OUTPUT RF INPUT Z1 L1 DUT C5 C1 C2 C3 C4 C6 C7 C8 C9 C1, C2, C7, C8, C9 -- 1.0-20 pF Piston Trimmer (Johanson JMC 5501) C3, C4 -- 36 pF ATC 100 mil Chip Capacitor C5, C6 -- 43 pF ATC 100 mil Chip Capacitor C10 -- 100 pF UNELCO C11, C15 -- 0.1 F Erie Redcap C12, C13 -- 680 pF Feedthru C14 -- 1.0 F 50 V Tantalum L1 -- 4 Turns #22 AWG Enameled, 3/16 ID Closewound with Ferroxcube L1 -- Bead (#56-590-65/4B) on Ground End of Coil L2 -- Ferroxcube VK200-19/4B Ferrite Choke L3 -- 7 Turns #18 AWG, 11/16 Long, Wound on a 100 k 2.0 Watt Resistor L4 -- 6 Turns #20 AWG Enameled, 3/16 ID Closewound L5 -- 4 Turns #22 AWG Enameled, 1/8 ID Closewound Z1 -- Microstrip 0.2 W x 1.5 L Z2 -- Microstrip 0.17 W x 1.16 L Z3 -- Microstrip 0.17 W x 0.63 L R1, R2 -- 10 2.0 Watt Board -- Glass Teflon r = 2.56, t = 0.062 Input/Output Connectors Type N DUT Socket Lead Frame Etched from 80-mil-Thick Copper Figure 1. 400 MHz Test Circuit REV 1 2 15 13 11 9 7 5 Pout , OUTPUT POWER (WATTS) Pout = 80 W VCC = 28 V 120 100 80 60 40 VCC = 28 V 100 200 300 f, FREQUENCY (MHz) 400 500 20 100 200 300 f, FREQUENCY (MHz) 400 500 Pin = 15 W G PE , POWER GAIN (dB) 10 W 7.5 W 5W Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Frequency 100 Pout , OUTPUT POWER (WATTS) 80 60 40 20 Pin = 12 W Pout , OUTPUT POWER (WATTS) 9W 6W 100 Pin = 15 W 80 60 40 20 f = 400 MHz 30 0 10 14 18 22 26 30 10 W 6W f = 225 MHz 0 10 14 18 22 26 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 120 Pout , OUTPUT POWER (WATTS) 100 80 60 40 20 f = 100 MHz 225 MHz 400 MHz 500 MHz VCC = 28 V 0 5 10 Pin, INPUT POWER (WATTS) 15 20 Figure 6. Output Power versus Input Power REV 1 3 -5 -10 f = 100 MHz f = 100 MHz 225 ZOL* 5 225 Zin 450 400 500 450 500 400 5 10 10 Pout = 80 W, VCC = 28 V f MHz 100 225 400 450 500 Zin Ohms 0.33 + j0.26 0.56 + j1.64 1.3 + j3.29 1.58 + j2.53 0.82 + j2.9 ZOL* Ohms 2.23 - j3.3 2.15 - j0.66 1.27 + j1.0 1.27 + j1.54 1.3 + j2.35 15 20 25 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 7. Series Equivalent Input-Output Impedance REV 1 4 PACKAGE DIMENSIONS D R F 4 3 NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. DIM A B C D E F H J K L N Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 K 1 Q 2 L B J E N H A U C EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 1 5 |
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